Dry-Developable Electron-Beam Resist. Synthesis and Resist Characteristic Evaluation of Amino-ended Poly(.ALPHA.-Methylstyrene).

Resist Mechanisms and Models in Electron-beam Lithography

Electron beam lithography on irregular surfaces using an evaporated resist.

An electron beam resist is typically applied by spin-coating, which cannot be reliably applied on nonplanar, irregular, or fragile substrates. Here we demonstrate that the popular negative electron beam resist polystyrene can be coated by thermal evaporation. A high resolution of 30 nm half-pitch was achieved using the evaporated resist. As a proof of concept of patterning on irregular surfaces...

Polystyrene negative resist for high-resolution electron beam lithography

We studied the exposure behavior of low molecular weight polystyrene as a negative tone electron beam lithography (EBL) resist, with the goal of finding the ultimate achievable resolution. It demonstrated fairly well-defined patterning of a 20-nm period line array and a 15-nm period dot array, which are the densest patterns ever achieved using organic EBL resists. Such dense patterns can be ach...

Resist evaluation for Ni mold fabrication and proton beam writing

In our experiments, we use different photoresists for proton beam writing and mold fabrication. We have fabricated Ni mold with structures down to 500 nm. We first use a fine focused proton beam to expose different photoresists, Polymethyl Methacrylate (PMMA), AR-P 3250 and ma-N 2410. After development and nickel sulfamate electroplating, the structures were faithfully transferred from the phot...

Sub-5 keV Electron-Beam Lithography in Hydrogen Silsesquioxane Resist

We fabricated 9 to 30 nm half-pitch nested Ls and 13 to 15 nm half-pitch dot arrays, using 2 keV electron-beam lithography with hydrogen silsesquioxane (HSQ) as the resist. All structures with 15 nm half-pitch and above were fully resolved. We observed that the 9 and 10-nm half-pitch nested L’s and the 13-nm-half-pitch dot array contained some resist residues. We obtained good agreement between...